maximum ratings: (t a =25c unless otherwise noted) symbol units peak repetitive reverse voltage v rrm 100 v dc blocking voltage v r 100 v rms reverse voltage v r(rms) 70 v average forward current (t a =40c)(1) i o 0.5 a average forward current (t a =40c)(2) i o 0.8 a peak forward surge current i fsm 30 a operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance (3) ja 85 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r = 100v 5.0 a i r v r = 100v, t a =125c 500 a v f i f =400ma 1.0 v c j v r =4.0v, f=1.0mhz 9.0 pf (1) mounted on a glass-epoxy p.c.b. (2) mounted on a ceramic p.c.b. (3) mounted on p.c.b. with 0.5? x 0.5? copper pads. CBRHD-01 high density 0.8 amp dual in line bridge rectifier hd dip case central semiconductor corp. tm r0 (11-february 2005) features: ? truly efficient use of board space, requires only 42mm 2 of board space vs. 120mm 2 of board space for industry standard 1.0 amp surface mount bridge rectifier. ? 50% higher density (amps/mm 2 ) than the industry standard 1.0 amp surface mount bridge rectifier. ? glass passivated chips for high reliability. description: the central semiconductor CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. marking code: CBRHD-01: cbd1 ? this series is ul listed, ul file number e130224
central semiconductor corp. tm hd dip case - mechanical outline CBRHD-01 high density 0.8 amp dual in line bridge rectifier r0 (11-february 2005) marking code: cbrhd01: cbd1
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